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Preliminary Data Sheet
HiPerFASTTM IGBT
IXGH32N50B VCES IXGH32N50BS I C25 VCE(sat) tfi
TO-247 SMD (32N50BS)
= = = =
500 V 60 A 2.0 V 80 ns
Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 33 Clamped inductive load, L = 100 H TC = 25C
Maximum Ratings 500 500 20 30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C Features
l
G E
C (TAB)
TO-247 AD
C (TAB) G C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3)
1.13/10 Nm/lb.in. TO-247 AD TO-247 SMD 6 4 g g
l l l
International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.5 TJ = 25C TJ = 125C V V A mA nA V
Applications
l l l l l l
BVCES VGE(th) I CES I GES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 250 A, VCE = VGE
5 200 1 100 2.0
V CE = 0.8 * VCES VGE = 0 V V CE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
PFC circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
Advantages
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High power density Very fast switching speeds for high frequency applications
(c) 1997 IXYS All rights reserved
95564A (4/97)
IXGH32N50B
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 15 20 2500 VCE = 25 V, VGE = 0 V, f = 1 MHz 230 70 125 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 V CES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 V CES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG 23 50 25 30 100 80 0.7 25 35 0.3 120 120 1.2 200 150 1.5 150 35 75 S
IXGH32N50BS
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
I C = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
P
pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns TO-247 SMD Outline mJ 0.62 K/W
Dim.
e
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
0.25
K/W
Min. Recommended Footprint
(Dimensions in inches and (mm))
1. Gate 2. Collector
3. Emitter 4. Collector
Dim. A A1 A2 b b1 C D E e L L1 L2 L3 L4 OP Q R S
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.91 0.61 20.80 15.75 5.45 4.90 2.70 2.10 0.00 1.90 3.55 5.59 4.32 6.15 1.40 2.13 0.80 21.34 16.13 BSC 5.10 2.90 2.30 0.10 2.10 3.65 6.20 4.83 BSC
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .075 .024 .819 .620 .215 .193 .106 .083 .00 .075 .140 .220 .170 .242 .055 .084 .031 .840 .635 BSC .201 .114 .091 .004 .083 .144 .244 .190 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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